Semiconductor device structures with floating body charge storage and methods for forming such semiconductor device structures.

ABSTRACT

Semiconductor device structures including a semiconductor body that is partially depleted to define a floating charge-neutral region supplying a floating body for charge storage and methods for forming such semiconductor device structures. The width of the semiconductor body is modulated so that different sections of the body have different widths. When electrically biased, the floating charge-neutral region at least partially resides in the wider section of the semiconductor body.

FIELD OF THE INVENTION

The invention relates to semiconductor device structures and methodsand, in particular, to semiconductor device structures having floatingbody charge storage permitting operation as a memory cell and methods offorming such semiconductor device structures.

BACKGROUND OF THE INVENTION

Dynamic random access memory (DRAM) devices are the most commonly usedtype of semiconductor memory and, thus, are found in many integratedcircuit designs. A generic DRAM device includes a plurality ofsubstantially identical memory cell arrays, a plurality of bit lines,and a plurality of word lines that intersect the bit lines. Eachindividual memory cell array includes a plurality of memory cellsarranged in rows and columns. Each individual memory cell includes astorage capacitor for storing data in the form of charges and an accessdevice, such as a planar or vertical field effect transistor (FET), forallowing the transfer of data charges to, and from, the storagecapacitor during read and write operations. Each memory cell in thearray is located at the intersection of one of the word lines and one ofthe bit lines. Either the source or drain of the access device isconnected to one of the bit lines and the gate of the access device isconnected to one of the word lines.

A different type of dynamic memory, referred to as zero capacitor DRAMor ZRAM, has been developed in which the charge is stored in acharge-neutral floating body of a transistor. Conventionally, thetransistor used in a ZRAM device is built using a silicon-on-insulatorsubstrate, which provides a high degree of isolation for the floatingbody to the substrate.

Fin-type field effect transistors (FinFETs) are low-power, high-speednon-planar devices that can be more densely packed in an integratedcircuit than traditional planar transistors. In comparison withtraditional planar transistors, the three-dimensional FinFETs offersuperior short channel scalability, a reduced threshold voltage swing,higher mobility, and the ability to operate at lower supply voltages.

An integrated circuit that includes FinFETs may be fabricated asilicon-on-insulator (SOI) wafer that includes an active SOI layer of asingle crystal semiconductor, such as silicon, a semiconductorsubstrate, and a buried insulating layer that separates and electricallyisolates the semiconductor substrate from the SOI layer. Each FinFETincludes a narrow vertical semiconductor body fashioned from the SOIlayer. The sidewalls of each FinFET intersect the buried insulatinglayer. A conductive gate electrode, which intersects a channel of thesemiconductor body, is isolated electrically from the semiconductor bodyby a thin gate dielectric layer. The opposite ends of the semiconductorbody, which project outwardly from beneath the gate electrode, areheavily doped to define source and drains that flank the channel. When avoltage exceeding a characteristic threshold voltage is applied to thegate electrode, a depletion/inversion layer is formed in the channelthat permits carrier flow between the source and drain (i.e., the deviceoutput current).

A FinFET may be operated in two distinct modes contingent upon thecharacteristics of the depletion layer. A FinFET is considered tooperate in a partially-depleted mode when the depletion layer fails toextend completely across the width of the fin body. The undepletedportion of the fin body in the channel, which is electricallyconductive, slowly charges as the FinFET is switched to various voltagesdepending upon its most recent history of use. A FinFET is considered tooperate in a fully-depleted mode when the depletion layer extends acrossthe full width of the fin body and there is no charge-neutral region ofthe body

Generally, a fully-depleted FinFET exhibits performance gains incomparison with a FinFET operating in a partially-depleted mode.Specifically, fully-depleted FinFETs exhibit significant reductions inleakage current and dissipate less power into the substrate, whichreduces the probability of device overheating. Parasitic capacitancesare also greatly reduced in fully-depleted FinFETs, which significantlyimproves the device switching speed.

What is needed, nevertheless, is a FinFET device construction thatoperates as a memory cell in which a floating charge-neutral region ofthe partially-depleted semiconductor body of the FinFET isadvantageously used for charge storage.

SUMMARY OF THE INVENTION

An embodiment of the invention is directed to a semiconductor devicestructure carried on a dielectric layer. The semiconductor devicestructure comprises a semiconductor body having first and secondsidewalls extending to the dielectric layer. The semiconductor body,which is doped with an impurity of a conductivity type, includes a firstsection at least partially intersected by a gate electrode and a secondsection. The first section is wider than the second section. The widthof the first section and a concentration of the impurity in the firstsection are selected such that the first section is partially depletedto define a floating charge-neutral region therein when biased by a biaspotential applied by the gate electrode.

Another embodiment of the invention is directed to a method of forming asemiconductor structure using a semiconductor-on-insulator substratehaving a semiconductor layer, a bulk region of a first conductivity typeunderlying the semiconductor layer, and a dielectric layer between thesemiconductor layer and the bulk region. The method comprises patterningthe semiconductor layer to define a semiconductor body with sidewallsextending to the dielectric layer. The semiconductor body has a firstsection with a first width between the opposite sidewalls and a secondsection with second width between the opposite sidewalls that isnarrower than the first width. The method further comprises introducingan impurity into the first section of the semiconductor body with afirst concentration selected in conjunction with the first width suchthat, when the first section is biased by a bias potential, the firstsection is partially depleted to define a floating charge-neutral regiontherein. In an alternative embodiment, the first impurity may also beintroduced into the second section of the semiconductor body with asecond concentration selected in conjunction with the second width suchthat, when the second section is biased by the bias potential, thesecond section is fully depleted.

The semiconductor device structures of the embodiments of the inventionmay operate with stored-charge retention times, which may loweroperation power. Embodiments of the invention rely on a FinFET operatingin a partially-depleted mode in which a portion of the semiconductorbody of the partially-depleted FinFET is used for charge storage. Thestate of memory cell is determined by the concentration of charge withinan electrically-floating body region resulting from operation in apartially-depleted mode.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate embodiments of the invention and,together with a general description of the invention given above and thedetailed description of the embodiments given below, serve to explainthe principles of the invention.

FIG. 1A is diagrammatic top view of a portion of a substrate at aninitial fabrication stage of a processing method in accordance with anembodiment of the invention.

FIG. 1B is a diagrammatic cross-sectional view taken generally alongline 1B-1B of FIG. 1A.

FIG. 2A is diagrammatic top view of the substrate portion at afabrication stage subsequent to FIG. 1A.

FIG. 2B is a diagrammatic cross-sectional view taken generally alongline 2B-2B of FIG. 2A.

FIG. 3A is diagrammatic top view of the substrate portion at afabrication stage subsequent to FIG. 2A.

FIG. 3B is a diagrammatic cross-sectional view taken generally alongline 3B-3B of FIG. 3A.

FIG. 4A is diagrammatic top view of the substrate portion at afabrication stage subsequent to FIG. 3A.

FIG. 4B is a diagrammatic cross-sectional view taken generally alongline 4B-4B of FIG. 4A.

FIG. 5A is diagrammatic top view of the substrate portion at afabrication stage subsequent to FIG. 4A.

FIG. 5B is a diagrammatic cross-sectional view taken generally alongline 5B-5B of FIG. 5A.

FIG. 5C is a diagrammatic cross-sectional view taken generally alongline 5C-5C of FIG. 5A.

FIG. 6A is diagrammatic top view of the substrate portion at afabrication stage subsequent to FIG. 5A.

FIG. 6B is a diagrammatic cross-sectional view taken generally alongline 6B-6B of FIG. 6A.

FIG. 6C is a diagrammatic cross-sectional view taken generally alongline 6C-6C of FIG. 6A.

FIG. 7 is diagrammatic top view showing an array of the semiconductordevice structures of FIG. 6A distributed across a larger-area portion ofthe substrate.

FIG. 8A is diagrammatic top view of the substrate portion similar toFIG. 6A, but in accordance with an alternative embodiment of theinvention.

FIG. 8B is a diagrammatic cross-sectional view taken generally alongline 8B-8B of FIG. 8A.

FIG. 8C is a diagrammatic cross-sectional view taken generally alongline 8C-8C of FIG. 8A.

FIG. 9A is diagrammatic top view of the substrate portion similar toFIG. 6A, but in accordance with an alternative embodiment of theinvention.

FIG. 9B is a diagrammatic cross-sectional view taken generally alongline 9B-9B of FIG. 9A.

FIG. 9C is a diagrammatic cross-sectional view taken generally alongline 9C-9C of FIG. 9A.

FIG. 10 is a diagrammatic cross-sectional view taken in a source of thesemiconductor fin in accordance with an alternative embodiment of theinvention.

DETAILED DESCRIPTION

With reference to FIGS. 1A and 1B, a semiconductor-on-insulator (SOI)substrate 10 includes a semiconductor layer 12 with a top surface 13, aburied insulating layer 14, and a handle or bulk region 16 separatedfrom the semiconductor layer 12 by the buried insulating layer 14. Thesemiconductor layer 12 and buried insulating layer 14 are coextensivealong a boundary or interface 18. Similarly, the bulk region 16 andburied insulating layer 14 are coextensive along a boundary or interface20.

The SOI substrate 10 may be fabricated by any suitable conventionaltechnique, such as a wafer bonding and splitting technique. In therepresentative embodiment, the semiconductor layer 12 is made from asingle crystal or monocrystalline silicon-containing material, such assilicon, and the bulk region 16 may likewise be formed from a singlecrystal or monocrystalline silicon-containing material, such as silicon.The semiconductor layer 12 may be as thin as about 10 nanometers or lessand, typically, is in the range of about 5 nanometers to about 150nanometers, but is not so limited. The thickness of the bulk region 16,which is considerable thicker than the semiconductor layer 12, is notshown to scale in FIG. 1. The buried insulating layer 14 comprises aconventional dielectric material, such as silicon dioxide (SiO₂), andmay have a thickness in the range of about 50 nanometers to about 150nanometers, although not so limited.

The top surface 13 of semiconductor layer 12 is covered by a pad stackconsisting of first and second pad layers 22, 24. The thinner first padlayer 22 separates the thicker second pad layer 24 from thesemiconductor layer 12. The constituent material(s) of pad layers 22, 24are chosen to etch selectively to the semiconductor materialconstituting semiconductor layer 12 and to be readily removed at asubsequent stage of the fabrication process. The first pad layer 22 maybe SiO₂ with a thickness on the order of about 5 nanometers to about 10nanometers and may be grown by exposing the semiconductor layer 12 toeither a dry oxygen ambient or steam in a heated environment ordeposited by a conventional deposition process, such as thermal chemicalvapor deposition (CVD). The second pad layer 24 may be a conformal layerof silicon nitride (Si₃N₄) with a thickness on the order of about 20nanometers to about 200 nanometers and deposited by a thermal CVDchemical vapor deposition process like low-pressure chemical vapordeposition (LPCVD) or a plasma-assisted CVD process. The first pad layer22 may operate as a buffer layer to prevent any stresses in the materialconstituting the second pad layer 24 from initiating the formation ofdislocations in the semiconductor material of semiconductor layer 12.

A resist layer 26 is applied on a top surface of pad layer 24 andpatterned by a conventional lithography process. The resist layer 26 maybe patterned by exposure to radiation, which creates a latent pattern inthe constituent resist, and then developing the latent pattern in theexposed resist. The residual portions of the resist layer 26 define amask that is used to pattern the pad layers 22, 24 and, subsequently,the semiconductor layer 12.

The patterned resist layer 26 includes an array of substantiallyidentical linear features, of which linear feature 28 is representative.Linear feature 28 includes constituent sub-features characterized bygraduated or modulated widths. Specifically, linear feature 28 includesrelatively narrow sections 30, tapered sections 32, and relatively widesections 34 joined in continuity with the narrow sections 30 and taperedsections 32. The narrow sections 30 and wide sections 34 are arrangedsuch that each of the relatively wide sections 34 is disposed between apair of adjacent narrow sections 30. Each narrow section 30 ischaracterized by a constant width, W₁, and each of the wide sections 34is characterized by a constant width, W₂. Each of the tapered sections32 provides a dimensional transition between the width, W₁, of each ofthe narrow sections 30 and the width, W₂, of the adjacent one of thewide sections 34. The widths of the sections 30, 32, 34 are measured ina transverse direction relative to the sidewalls of the linear feature28.

In an alternative embodiment, the pad stack including pad layers 22, 24can be omitted such that the patterned resist layer 26 is supporteddirectly on the top surface 13 of the semiconductor layer 12.

With reference to FIGS. 2A and 2B in which like reference numerals referto like features in FIGS. 1A and 1B, respectively, and at a subsequentfabrication stage, the semiconductor layer 12 is patterned to define aplurality of substantially identical semiconductor fins, of whichsemiconductor fin 36 is representative, that are distributed across theSOI substrate 10 to reflect the patterned resist layer 26 (FIGS. 1A and1B). The semiconductor layer 12 may be patterned using a conventionaletching process that relies on the patterned resist layer 26 as a mask.In one embodiment, an anisotropic dry etching process, such asreactive-ion etching (RIE) or plasma etching, may be employed totransfer the pattern from the patterned resist layer 26 into the padlayers 22, 24 and, thereby, define a hardmask. The etching process,which may be conducted in a single etching step or multiple etchingsteps with different etch chemistries, removes portions of the padlayers 22, 24 visible through the pattern in the patterned resist andstops vertically on the top surface 13 of semiconductor layer 12. Afteretching is concluded, resist layer 26 is stripped from the pad layers22, 24 by, for example, plasma ashing or a chemical stripper.

The pattern is then transferred from the patterned pad layers 22, 24 ofthe hardmask into the underlying semiconductor layer 12. The transfermay be accomplished using an anisotropic dry etching process such as,for example, a RIE or a plasma etching process. In one embodiment, anetch chemistry (e.g., a standard silicon RIE process) is employed toextend the pattern through the semiconductor layer 12 that removes theconstituent semiconductor material selective to (i.e., with asignificantly greater etch rate than) the materials constituting the padlayers 22, 24 and that stops on the buried insulating layer 14. As aresult, the semiconductor layer 12 is patterned to the depth of theburied insulating layer 14.

The semiconductor fin 36 has a geometrical shape of constituentsub-features characterized by graduated or modulated widths that matchesthe respective overlying linear feature 28 in the patterned resist layer26. Specifically, semiconductor fin 36 includes a series of spaced-apartrelatively narrow sections, such as the representative narrow sections37, 38. The narrow sections 37, 38 are spatially correlated with andunderlie the narrow sections 30 of the linear feature 28 of resist layer26 (FIG. 1). Semiconductor fin 36 also includes a series of taperedsections, such as the representative tapered sections 39, 40, 41, thatare spatially correlated with and underlie the tapered sections 32 ofthe linear feature 28 of resist layer 26. Semiconductor fin 36 alsoincludes a series of relatively wide sections, such as therepresentative relatively wide sections 42, 43, joined in continuitywith the narrow sections 38 and tapered sections 40. The wide sections42 are spatially correlated with and underlie the wide sections 34 ofthe linear feature 28 of resist layer 26.

The sections 38-43 are distributed along the length of the semiconductorfin 36. The narrow sections 37, 38 and wide sections 42, 43 of thesemiconductor fin 36 are arranged such that wide section 42 is disposedbetween the adjacent narrow sections 37, 38 and wide section 43 isdisposed between narrow section 38 and an adjacent narrow section (notshown). Each narrow section 37, 38 is characterized by a constant width,W₃, measured between the sidewalls 44, 46 and each of the wide sections42, 43 is characterized by a constant width, W₄, likewise measuredbetween the sidewalls 44, 46. The width W₄ of the wide sections 42, 43is greater than the width W₃ of the narrow sections 37, 38. The taperedsections 39, 40, 41 provide dimensional transitions between the width,W₃, of the narrow sections 37, 38 and the width, W₄, of the widesections 42, 43. By definition, the tapered sections 39, 40, 41 have awidth that is narrower than the width W₄ of the wide sections 42, 43.

The semiconductor fin 36 includes opposite sidewalls 44, 46 that extendfrom the top surface 13 to the buried insulating layer 14. The oppositesidewalls 44, 46 are substantially parallel to each other andperpendicular to the top surface 13 because of the directionality of theanisotropic etching process. The opposite sidewalls 44, 46 are orientedsubstantially perpendicular to the top surface 13 of semiconductor fin36 and to the buried insulating layer 14. The initial thickness of thesemiconductor layer 12 determines the height, h, of the semiconductorfins 36. The distance between the opposite sidewalls 44, 46 variesbetween the widths W₃ and W₄ along the length of semiconductor fin 36because of the width modulation. The widths of the sections 38-43 aremeasured in a transverse direction relative to the sidewalls 44, 46 ofthe semiconductor fin 36.

Semiconductor fin 36 is doped with an impurity 48 that, when activated,is effective to increase the electrical conductivity of the constituentsemiconductor material. If the semiconductor fin 36 is used for formingn-type field effect transistors, semiconductor fin 36 may be doped witha p-type impurity 48, such as boron (B), indium (In), or gallium (Ga).Alternatively, the semiconductor fin 36 may be doped with an n-typeimpurity 48, such as arsenic (As), phosphorus (P), or antimony (Sb), foruse in forming p-type field effect transistors. The impurity 48 mayintroduced into semiconductor fin 36 by an angled ion implantationprocess, or by another technique for doping semiconductor material withan impurity, as understood by a person having ordinary skill in the art.

In one embodiment, the impurity 48 is introduced into the sidewalls 44,46 of semiconductor fin 36 by an angled ion implantation process. Anensuing high-temperature anneal activates and distributes the impurity48 throughout the semiconductor material of the semiconductor fin 36 andmay also alleviate any crystal damage introduced by the ion implantationprocess.

The concentration of impurity 48 is selected in conjunction with widthsW₃ and W₄ such that, when biased during device operation, thesemiconductor material of at least a portion of each tapered section 39,40, 41 of semiconductor fin 36 is fully depleted, and at least a portionof each wide section 42, 43 of semiconductor fin 36 is partiallydepleted. The doping in the narrow sections 37, 38 of semiconductor fin36 affects the threshold voltage of the subsequently formed field effecttransistor. A typical concentration for impurity 48 in the semiconductormaterial may be approximately 1×10¹⁹ cm⁻³.

With reference to FIGS. 3A and 3B in which like reference numerals referto like features in FIGS. 2A and 2B, respectively, and at a subsequentfabrication stage, a gate dielectric layer 50 is formed on the sidewalls44, 46 of semiconductor fin 36 and adjacent semiconductor fins (notshown). The gate dielectric layer 50 may comprise any suitabledielectric or insulating material like silicon dioxide, siliconoxynitride, a high-k dielectric material such as hafnon (HfSiO₄), orcombinations of these materials. The dielectric material constitutinggate dielectric layer 50 may have a thickness between about 1 nm andabout 10 nm. The gate dielectric layer 50 may be formed by a CVDprocess, a physical vapor deposition (PVD) process, thermal reaction ofthe semiconductor material of semiconductor fin 36 with a reactant, anatomic layer deposition process (ALD) or a combination of thesetechniques.

Gate electrodes, such as the representative gate electrodes 52, 54, 56,are formed across the SOI substrate 10 from a layer of a gate conductormaterial that is deposited on the buried insulating layer 14 such thatsemiconductor fin 36 is covered. The gate conductor material may be, forexample, doped polysilicon, a silicided gate conductor comprisingpolysilicon capped with a silicide containing a metal like nickel (Ni)or cobalt (Co), a metal such as tungsten (W), molybdenum (Mo), ortantalum (Ta), or any other refractory metal, or any other appropriatematerial deposited by a CVD process, a PVD process, etc. The layer ofgate conductor material is covered by a hardmask, which is patternedusing photolithography. An anisotropic etching process relies on thehardmask to remove portions of the layer of gate conductor material todefine gate electrodes 52, 54, 56. The etching process also removes thegate insulator layer 50 from sections of semiconductor fin 36 notcovered by the gate electrodes 52, 54, 56. Residual portions of the gatedielectric layer 50 separate the sidewalls 44, 46 of semiconductor fin36 from the gate electrodes 52, 54, 56. The pad layers 22, 24 and thegate dielectric layer 50 are disposed between the top surface 13 of thesemiconductor fin 36 and the gate electrodes 52, 54, 56. The etchingprocess, which stops on the buried insulating layer 14, selectivelyremoves portions of the layer of gate conductor material and gatedielectric layer 50 without removing the semiconductor materialcontained in semiconductor fin 36.

Gate electrode 52 includes a top surface 58 and sidewalls 59, 60 thatextend from the top surface 58 to intersect the buried insulating layer14. Similarly, gate electrode 54 includes a top surface 62 and sidewalls63, 64 that extend from the top surface 62 to intersect the buriedinsulating layer 14. Gate electrode 56 likewise includes a top surface66 and sidewalls 67, 68 that extend from the top surface 66 to intersectthe buried insulating layer 14. The top surfaces 58, 62, 66 areillustrated as overlapping the top surface 13 of semiconductor fin 36.

Gate electrode 52 intersects the semiconductor fin 36 along a channel 70and, in the representative embodiment, partially overlaps narrow section37, wide section 42, and tapered section 39. Gate electrode 54intersects the semiconductor fin 36 along a channel 71 and, in therepresentative embodiment, partially overlaps narrow section 38, widesection 42, and tapered section 40. Gate electrode 54 intersects thesemiconductor fin 36 along a channel 72 and, in the representativeembodiment, partially overlaps narrow section 38, wide section 43, andtapered section 41.

In an alternative embodiment, the thickness of the gate electrodes 52,54, 56 may be reduced to be less than the height of the semiconductorfin 36. As a result, each of the gate electrodes 52, 54, 56 is dividedinto two distinct electrically disconnected gates separated by the widthof the semiconductor fin 36 (i.e., the distance between the sidewalls44, 46). Because of the thickness reduction, the gate electrodes 52, 54,56 will not overlap the semiconductor fin 36. For example, gateelectrode 54 may be reduced in thickness, as indicated by the dashedline in FIG. 3B, such that gate electrode 54 has two portions 54 a, 54 bthat are not electrically coupled. Portion 54 a may be employed as aback gate for transferring charge to and from the floatingcharge-neutral region 112 (FIG. 7) and portion 54 b may be utilized as awordline in the device construction.

With reference to FIGS. 4A and 4B in which like reference numerals referto like features in FIGS. 3A and 3B, respectively, and at a subsequentfabrication stage, dielectric spacers 75, 76 are formed on the sidewalls59, 60 of the gate electrode 52 and extend from a top surface of gateelectrode 52 to the buried insulating layer 14. Similarly, dielectricspacers 77, 78 are formed on the sidewalls 63, 64 of the gate electrode54 and dielectric spacers 79, 80 are formed on the sidewalls 63, 64 ofthe gate electrode 56. Dielectric spacers 77-80 each extend from a topsurface of the respective gate electrode 54, 56 to the buried insulatinglayer 14. The dielectric spacers 75-80 may originate from a conformallayer (not shown) of an electrically insulating material, such as about10 nanometers to about 50 nanometers of Si₃N₄ deposited by CVD, that isshaped by a directional anisotropic etching process that preferentiallyremoves the conformal layer from horizontal surfaces.

Portions of the semiconductor fin 36, which are exposed by the gateelectrodes 52, 54, 56, are doped with a concentration of an impurity 82that has a conductivity type opposite to the impurity 48 (FIG. 2). Theimpurity 82 may comprise As, P, or Sb for n-type device structures or,for p-type device structures, B, In, or Ga. The concentration ofimpurity 82 in the exposed portion of each narrow section 37, 38 iseffective to impart a conductivity characteristic of drains 83, 84 of afield effect transistor. The concentration of impurity 82 in the exposedportion of each wide section 42, 43 is effective to impart aconductivity characteristic of sources 86, 87 of a field effecttransistor. Source 86 includes a first portion 86 a containing theimpurity 82 that is located proximate to sidewall 44 and a secondportion 86 b containing the impurity 82 that is located proximate tosidewall 46. Similarly, source 87 includes a first portion 87 acontaining the impurity 82 that is located proximate to sidewall 44 anda second portion 87 b containing the impurity 82 that is locatedproximate to sidewall 46.

The impurity 82 is introduced into the sidewalls 44, 46 with a limitedrange so that the sources 86, 87 do not extend completely across thewidth of the wide sections 42, 43. As a result, a width of thesemiconductor fin 36 between the portions 86 a, 86 b of source 86 is notdoped with impurity 82. Similarly, a width of the semiconductor fin 36between the portions 87 a, 87 b of source 87 is not doped with impurity82. Instead, these widths of the semiconductor fin 36 have aconductivity characteristic of impurity 48 (FIGS. 2A, 2B), which isopposite in conductivity type to impurity 82.

The impurity 82 may be introduced into the semiconductor fin 36 byangled ion implantation, followed by a high-temperature anneal toactivate the impurity and to alleviate any damage introduced by theimplantation process. For example, an appropriate dose for the implantedimpurity 82 may be about 5×10¹⁵ cm⁻². Because of the high impurityconcentration, the source and drains 83, 84, 86, 87 have a degeneratelevel of doping such that the constituent semiconductor material hasconductive character or, in other words, a character that is moresimilar to a conductor than a semiconductor. Therefore, regardless ofoperating or bias conditions, the source and drains 83, 84, 86, 87 areelectrically conducting. Collectively, the pad layers 22, 24 have athickness adequate to operate as an implant mask for the top surface 13of the semiconductor fin 36, which helps to preserve the integrity ofthe floating bodies as described below. Optionally, extension and haloimplants may be performed into the channels 70-72.

With reference to FIGS. 5A-5C in which like reference numerals refer tolike features in FIGS. 4A and 4B, respectively, and at a subsequentfabrication stage, linear features, such as the representative linearfeature in wide section 42 generally indicated by reference numeral 90,are defined in the wide sections 42, 43 of the semiconductor fin 36.Linear feature 90 forms a discontinuity in the wide section 42 ofsemiconductor fin 36 that physically separates the wide section 42 todefine distinct semiconductor bodies 42 a, 42 b. A similar linearfeature (not shown) is formed in wide section 43. Source 86, which isdivided by the linear feature 90, is still shared by the semiconductorbodies 42 a, 42 b. As explained below, both portions of the dividedsource 86 are coupled with a shared electrical contact and, therefore,are coupled electrically in the final device structure. Anothersemiconductor body 42 c shares drain 84 with semiconductor body 42 b. Inaddition, another semiconductor body (not shown) of an adjacent widesection (not shown) shares drain 83 with semiconductor body 42 a.

In one embodiment, the linear feature 90 may be formed by a standardlithography and etching process familiar to a person having ordinaryskill in the art that removes a strip of the constituent semiconductormaterial in each wide section 42 extending from one of the sidewalls 44to the opposite sidewall 46. The etching process stops on the buriedinsulating layer 14 so that the linear feature 90 extends verticallyfrom the top surface 13 to the buried insulating layer 14, as best shownin FIG. 5C. A sidewall 92 of semiconductor body 42 a confronts asidewall 94 of semiconductor body 42 b.

The pad layers 22, 24 are removed from the semiconductor bodies 42 a, 42b, 42 c by a separate wet chemical etch process selective to thematerial constituting the semiconductor fin 36. For example, the wetchemical etch process may entail sequentially exposing the pad layers22, 24 to a heated etchant solution of phosphoric acid effective toremove nitride and an etchant solution of hydrofluoric acid effective toremove oxide.

A silicide layer 96 is formed on the top surface 13 and sidewalls 44, 46of the semiconductor fin 36 not covered by the gate electrodes 52, 54,56 and dielectric spacers 75-80 by a silicidation process familiar to aperson having ordinary skill in the art. The silicide layer 96 providesa low resistance contact to the semiconductor material constituting thesemiconductor fin 36.

In one representative silicidation process, the silicidation processforming silicide layer 96 includes depositing a layer of suitable metal,such as nickel (Ni), cobalt (Co), tungsten (W), titanium (Ti), etc.,across the SOI substrate 10 and then subjecting the metal-coated SOIsubstrate 10 to a high temperature anneal by, for example, a rapidthermal annealing process. During the high temperature anneal, the metalreacts with the silicon-containing semiconductor material (e.g.,silicon) of the semiconductor fin 36 to form the silicide layer 96. Theannealing phase of the silicidation process may be conducted in an inertgas atmosphere or in a nitrogen-rich gas atmosphere, and at atemperature of about 350° C. to about 800° C. contingent upon the typeof metal silicide being considered. Following the high temperatureanneal, unreacted metal remains on the buried insulating layer 14, thedielectric spacers 75-80, and the gate electrodes 52, 54, 56 (i.e.,where the deposited metal is not in contact with a silicon-containingmaterial). Unreacted metal is selectively removed using, for example, anisotropic wet chemical etch process.

With reference to FIGS. 6A-C in which like reference numerals refer tolike features in FIGS. 5A-C, respectively, and at a subsequentfabrication stage, a blanket layer 98 of an insulating material isapplied across the SOI substrate 10 and planarized by a conventionalplanarization process like chemical mechanical planarization (CMP). Theinsulating material of the blanket layer 98, which supplies aninterlayer dielectric, may be composed of a spin-on glass (SOG) materialapplied by coating the SOI substrate 10 with SOG material in liquidstate, spinning the SOI substrate 10 at high speeds to uniformlydistribute the liquid on the surface by centrifugal forces, and bakingat a low temperature to solidify the SOG material. Alternatively, theinsulating material of the blanket layer 98 may include multiplecoatings of different dielectric materials as understood by a personhaving ordinary skill in the art.

A portion of the dielectric material of blanket layer 98 fills thelinear feature 90 to define an isolation region 100 between theconfronting sidewalls 92, 94 of semiconductor bodies 42 a, 42 b. Theisolation region 100 is characterized by a “mesa-type” appearancefamiliar to a person having ordinary skill in the art. The isolationregion 100 electrically isolates adjacent semiconductor bodies 42 a, 42b from each other. Additional isolation regions (not shown), eachsubstantially identical to isolation region 100, electrically isolateother semiconductor bodies (not shown) of the semiconductor fin 36 fromreach other.

Electrical contacts to the drains 83, 84, such as the representativeelectrical contact defined by plug 102 to drain 84, are defined in theblanket layer 98. Electrical contacts to the sources 86, 87, such as therepresentative electrical contact defined by plug 104 to source 86, areconcurrently defined in the blanket layer 98. Plug 102 is electricallycoupled with a sense line in one of the metallization levels (notshown). Plug 104 is electrically coupled with a bit line in one of themetallization levels (not shown). In one embodiment, the plugs 102, 104are formed by lithographically patterning the blanket layer 98 in aconventional manner to form vias to the drains 83, 84 and to the sources86, 87. Plugs 102, 104 are formed into the vias using a conventionaldeposition technique, such as CVD or plating, that deposits conductivematerial in the vias and a chemical mechanical polishing (CMP) processthat removes excess conductive material. Suitable conductive materialsinclude, but are not limited to, doped polysilicon, a silicide (e.g.,WSi), or metals such as tungsten (W), copper (Cu), aluminum (Al), gold(Au), and alloys thereof deposited by evaporation, sputtering, or otherknown deposition techniques.

With reference to FIG. 7 in which like reference numerals refer to likefeatures in FIGS. 6A-6C, the semiconductor fin 36 contains aone-dimensional, linear array of semiconductor bodies, such as therepresentative semiconductor bodies 42 a, 42 b, 42 c, that arefunctional as semiconductor device structures, which are indicatedgenerally by reference numerals 106, 108, 110. Each of the semiconductorbodies 42 a, 42 b, 42 c includes, when biased during operation, arespective floating charge-neutral region 112, 114, 116. The floatingcharge-neutral regions 112, 114, 116, when the semiconductor bodies 42a, 42 b, 42 c are biased during device operation, represent chargeneutral volumes of semiconductor material or floating bodies that existin semiconductor fin 36 as a consequence of partial depletion ofcarriers. The charge neutral volumes of the floating charge-neutralregions 112, 114, 116 are located between the sidewalls 44, 46 andbetween the top surface 13 of the semiconductor fin 36 and thedielectric layer 14.

Floating charge-neutral region 112 is located in semiconductor body 42 abetween the source 86 and drain 83 in semiconductor fin 36 and at leastpartially underlies gate electrode 52 in sections 39 and 42. Locatedbetween the floating charge-neutral region 112 and the drain 83 is aregion 113 that is fully depleted when the semiconductor body 42 a isbiased. Floating charge-neutral region 114 is located in semiconductorbody 42 a between source 86 and drain 83 in semiconductor fin 36 and atleast partially underlies gate electrode 54 in sections 40 and 42.Located between the floating charge-neutral region 114 and the drain 84is a region 115 that is fully depleted when the semiconductor body 42 bis biased. Floating charge-neutral region 116 is located insemiconductor body 42 c between source 87 and drain 84 and at leastpartially underlies gate electrode 56 in sections 41 and 43. Locatedbetween the floating charge-neutral region 116 and the drain 84 is aregion 117 that is fully depleted when the semiconductor body 42 c isbiased.

The fully-depleted regions 113, 115, 117 represent volumes ofsemiconductor material doped with impurity 48 (FIGS. 2A, 2B) at aconcentration and with a width selected to provide full depletion whenbiased and define channel regions for carrier flow between thecorresponding source and drain. The floating charge-neutral regions 112,114, 116 represent volumes of semiconductor material doped with impurity48 (FIGS. 2A, 2B) at a concentration and with a width selected toprovide only partial depletion when biased. As the tapered section 39 ofsemiconductor body 42 a narrows from the width W₄ to width W₃, thefloating charge-neutral region 112 tapers to a tip at an intermediatewidth between W₄ and W₃ so as to transition to the fully-depleted region113, which extends in the tapered section 39 at least between theintermediate width and width W₃. As the tapered section 40 ofsemiconductor body 42 b narrows from the width W₄ to width W₃, thefloating charge-neutral region 114 tapers to a tip at an intermediatewidth between W₄ and W₃ so as to transition to the fully-depleted region115, which extends in the tapered section 40 between the intermediatewidth and width W₃. As the tapered section 41 of semiconductor body 42 cnarrows from the width W₄ to width W₃, the floating charge-neutralregion 116 tapers to a tip at an intermediate width between W₄ and W₃ soas to transition to the fully-depleted region 117, which extends in thetapered section 41 between the intermediate width and width W₃.

Each of the floating charge-neutral regions 112, 114 may be at leastpartially located in the wide section 42 of the semiconductor fin 36generally between the two portions 86 a, 86 b of the source 86, as shownin FIGS. 6A and 7. Similarly, the floating charge-neutral region 116 maybe at least partially located in the wide section 43 of thesemiconductor fin 36 generally between the two portions 87 a, 87 b ofthe source 87, as also shown in FIGS. 6A and 7. The widths of theseportions of the floating charge-neutral regions 112, 114, 116 in thewide sections 42, 43 of the semiconductor fin 36 may be constant overtheir length, as depicted in FIGS. 6A and 7.

Chevron-shaped portions of the floating charge-neutral regions 112, 114,116 are present in the respective tapered sections 39, 40, 41. Thechevron shape arises from the narrowing of the sidewalls 44, 46 intapered sections 39, 40, 41 to a width that results in full depletion.Accordingly, fully-depleted region 113 intervenes between the tip of thechevron-shaped portion of the floating charge-neutral region 112 and thenarrow section 37, which includes the drain 83. Fully-depleted region115 intervenes between the tip of the chevron-shaped portion of floatingcharge-neutral region 114 and the narrow section 38, which includes thedrain 84. Fully-depleted region 117 intervenes between the tip of thechevron-shaped portion of floating charge-neutral region 116 and thenarrow section 38, which includes the drain 84.

The floating charge-neutral regions 112, 114, 116 develop during deviceoperation because the semiconductor fin 36 is only partially depleted inat least a portion of the wide sections 42, 43 and an adjacent portionof an adjoining one of the tapered sections 39, 40, 41 because of thecombination of the width and doping concentration. Consequently, thesemiconductor device structures 106, 108, 110 include fin-type fieldeffect transistors (FinFETs) and floating charge-neutral regions 112,114, 116 used for charge storage so that the semiconductor devicestructures 106, 108, 110 can operate as individual memory cells.

As apparent from FIG. 7, the semiconductor device structures 106, 108,110 are replicated across the SOI substrate 10 during the fabricationprocess. An adjacent set of semiconductor device structures 106 a, 108a, 110 a, which are similar to semiconductor device structures 106, 108,110, are formed using an adjacent semiconductor fin 36 a, which issimilar to semiconductor fin 36. An adjacent set of semiconductor devicestructures 106 b, 108 b, 110 b, which are similar to semiconductordevice structures 106, 108, 110, is formed using an adjacentsemiconductor fin 36 b, which is similar to semiconductor fin 36. Anadjacent set of semiconductor device structures 106 c, 108 c, 110 c,which are similar to semiconductor device structures 106, 108, 110, isformed using an adjacent semiconductor fin 36 c which is similar tosemiconductor fin 36. Additional semiconductor device structures (notshown) are formed along the length of each the semiconductor fins 36, 36a-c and additional semiconductor fins (not shown), each includingadditional semiconductor device structures (not shown), may be locatedin a flanking relationship with semiconductor fins 36, 36 a-c so as todefine a memory cell array.

Standard processing follows, which includes metallization for the M1level interconnect wiring, and interlayer dielectric layers, conductivevias, and metallization for upper level (M2-level, M3-level, etc.)interconnect wiring. Metallization in one of the upper levels ofinterconnect wiring establishes electrical contacts with the gateelectrodes 52, 54, 56.

The isolation region 100 between the semiconductor bodies 42 a, 42 b ofthe semiconductor fin 36 may be established by alternative types ofstructures, as described below.

With reference to FIGS. 8A-C in which like reference numerals refer tolike features in FIGS. 6A-C and in accordance with an alternativeembodiment, an isolation region 130 is defined as a region of thesemiconductor fin 36 doped to have the same conductivity type as thesource 86. In this embodiment, the pad layers 22, 24 are removed fromthe top surface 13 of the semiconductor fin 36 before the impurity 82 isintroduced into the semiconductor fin 36. A mask is applied to restrictthe introduction of impurity 82 so that isolation region 130 is definedas a doped portion of the semiconductor fin 36 in the wide section 42without also encroaching on the floating charge-neutral regions 112,114, which are free of a significant concentration of impurity 82. Theisolation region 130 bridges the two portions 96 a,b of the source 86formed along the sidewalls 44, 46. The isolation region 130 is thereforedefined in the wide section 42 of semiconductor fin 36 as ajunction-type isolation. Processing continues as described in connectionwith FIGS. 6A-C.

With reference to FIGS. 9A-C in which like reference numerals refer tolike features in FIGS. 6A-C and in accordance with an alternativeembodiment, an isolation region 140 is defined as a trench-typeisolation in the wide section 42 of semiconductor fin 36. The isolationregion 140 is formed by a standard lithography and etching processfamiliar to a person having ordinary skill in the art that defines anopening or via in the constituent semiconductor material in wide section42. The etching process stops on the buried insulating layer 14 so thatthe gap extends from the top surface 13 to the buried insulating layer14. However, portions of the doped semiconductor material of source 86are preserved intact along each sidewall 44, 46 when the via is defined.In contrast to isolation region 100 (FIGS. 6A-C), isolation region 140does not extend across the entire width of the semiconductor fin 36.Instead, the perimeter of the isolation region 140 is spaced inwardlyfrom the sidewalls 44, 46. The via is filled by dielectric materialoriginating from the blanket layer 98 that is applied to define theisolation region 140 between the adjacent semiconductor bodies 42 a, 42b. Processing continues as described in connection with FIGS. 6A-C.

With reference to FIG. 10 in which like reference numerals refer to likefeatures in FIG. 6B and in accordance an alternative embodiment of theinvention, the dielectric material of pad layers 22, 24 may be retainedon the top surface 13 of the semiconductor fin 36 in the regions thatdefine the sources 86, 87 and the drains 83, 84. An electrical contactin the form of a plug 104 a, which is similar to plug 104 (FIG. 9A),includes portions 150, 152 that extend downwardly along the sidewalls44, 46 so as to have a greater degree of overlap with the sidewalls 44,46 than plug 104. The portions 150, 152 of plug 104 a establishelectrical contact with the silicide 96 on the sidewalls 44, 46 of thesemiconductor fin 36 so that the electrical contact 104 a iselectrically coupled with both portions 86 a, 86 b of the source 86.Similar electrical contacts (not shown) are fabricated that are used toestablish an electrical connection with source 87 and the drains 83, 84.

References herein to terms such as “vertical”, “horizontal”, etc. aremade by way of example, and not by way of limitation, to establish aframe of reference. The term “horizontal” as used herein is defined as aplane parallel to a conventional plane of a semiconductor wafer orsubstrate, regardless of its actual three-dimensional spatialorientation. The term “vertical” refers to a direction perpendicular tothe horizontal, as just defined. Terms, such as “on”, “above”, “below”,“side” (as in “sidewall”), “higher”, “lower”, “over”, “beneath” and“under”, are defined with respect to the horizontal plane. It isunderstood that various other frames of reference may be employed fordescribing the invention without departing from the spirit and scope ofthe invention. The term “on” used in the context of two layers means atleast some contact between the layers. The term “over” means two layersthat are in close proximity, but possibly with one or more additionalintervening layers such that contact is possible but not required. Asused herein, neither “on” nor “over” implies any directionality.

The fabrication of the semiconductor structure herein has been describedby a specific order of fabrication stages and steps. However, it isunderstood that the order may differ from that described. For example,the order of two or more fabrication steps may be switched relative tothe order shown. Moreover, two or more fabrication steps may beconducted either concurrently or with partial concurrence. In addition,various fabrication steps may be omitted and other fabrication steps maybe added. It is understood that all such variations are within the scopeof the invention. It is also understood that features of the inventionare not necessarily shown to scale in the drawings.

While the invention has been illustrated by a description of variousembodiments and while these embodiments have been described inconsiderable detail, it is not the intention of the applicants torestrict or in any way limit the scope of the appended claims to suchdetail. Additional advantages and modifications will readily appear tothose skilled in the art. Thus, the invention in its broader aspects istherefore not limited to the specific details, representative apparatusand method, and illustrative example shown and described. Accordingly,departures may be made from such details without departing from thespirit or scope of applicants' general inventive concept.

1. A semiconductor device structure carried on a dielectric layer, thesemiconductor device structure comprising: a gate electrode; and asemiconductor body having first and second sidewalls extending to thedielectric layer, the semiconductor body doped with a first impurity ofa first conductivity type, the semiconductor body including a firstsection and a second section, the first section at least partiallyintersected by the gate electrode, the first section having a firstwidth between the first and second sidewalls, and the second sectionhaving a second width between the first and second sidewalls, whereinthe first width of the first section is wider than the second width ofthe second section, and the first width and a concentration of the firstimpurity in the first section are selected such that the first sectionis partially depleted to define a floating charge-neutral region thereinwhen biased by a bias potential applied by the gate electrode.
 2. Thesemiconductor device structure of claim 1 wherein the second width and aconcentration of the first impurity in the second section of thesemiconductor body are selected such that the second section of thesemiconductor body is fully depleted when biased by the bias potential.3. The semiconductor device structure of claim 1 further comprising: asource in the first section of the semiconductor body, the source dopedwith a second impurity having an opposite conductivity type to the firstimpurity.
 4. The semiconductor device structure of claim 3 wherein thesource includes a first portion proximate to the first sidewall and asecond portion proximate to the second sidewall, and the floatingcharge-neutral region is at least partially disposed in the firstsection of the semiconductor body between the first and second portionsof the source.
 5. The semiconductor device structure of claim 4 whereinthe semiconductor body includes a third section separated from the firstsection by the second section, the third section having a third widthless than the second width, and further comprising: a drain in the thirdsection of the semiconductor body, the drain doped with the secondimpurity.
 6. The semiconductor device structure of claim 4 furthercomprising: an impurity-doped bridge extending across the semiconductorbody to connect the first and second portions of the source, the bridgedoped with a concentration of the second impurity.
 7. The semiconductordevice structure of claim 3 wherein the semiconductor body has a topsurface, and further comprising: a dielectric pad layer on the topsurface of the semiconductor body; and a conductive plug electricallyconnected to the source, the conductive plug extending toward thedielectric pad layer and overlapping at least a portion of the first andsecond sidewalls.
 8. The semiconductor device structure of claim 1wherein the second section is juxtaposed with the first section andtapers from the first width to the second width.
 9. The semiconductordevice structure of claim 1 wherein the gate electrode comprises: afirst gate adjacent to the first sidewall of the semiconductor body, thefirst gate configured to bias the first section to define the floatingcharge-neutral region; and a second gate adjacent to the second sidewallof the semiconductor body and separated from the first gate by thesemiconductor body, the second gate configured to operate as a wordline.10. The semiconductor device structure of claim 1 further comprising: anisolation region positioned in the first section of the semiconductorbody, the isolation region electrically isolating the first section ofthe semiconductor body from an adjacent semiconductor body.
 11. Thesemiconductor device structure of claim 10 wherein the isolation sectionfurther comprises: a dielectric region defined in the semiconductorbody.
 12. The semiconductor device structure of claim 11 wherein thedielectric region extends completely across the semiconductor body fromthe first sidewall to the second sidewall.
 13. A method of fabricating asemiconductor device structure using a semiconductor-on-insulatorsubstrate having a semiconductor layer, a bulk semiconductor regionunderlying the semiconductor layer, and a dielectric layer between thesemiconductor layer and the bulk semiconductor region, the methodcomprising, the method comprising: patterning the semiconductor layer todefine a semiconductor body with opposite sidewalls extending to thedielectric layer, the semiconductor body having a first section with afirst width between the opposite sidewalls and a second section withsecond width between the opposite sidewalls that is narrower than thefirst width; and introducing a first impurity into the first section ofthe semiconductor body with a first concentration selected inconjunction with the first width such that, when the first section isbiased by a bias potential, the first section is partially depleted todefine a floating charge-neutral region therein.
 14. The method in claim13 further comprising: introducing the first impurity into the secondsection of the semiconductor body with a second concentration selectedin conjunction with the second width such that, when the second sectionis biased by the bias potential, the second section is fully depleted.15. The method in claim 13 further comprising: introducing a secondimpurity of an opposite conductivity type to the first impurity into thefirst section of the semiconductor body with a concentration effectiveto define a source that includes a first portion proximate to one of theopposite sidewalls and a second portion proximate to the other of theopposite sidewalls so that the floating charge-neutral region is atleast partially disposed between the first and second portions of thesource.
 16. The method in claim 13 further comprising: forming anisolation region in the first section of the semiconductor body thatextends from a top surface of the semiconductor body to the dielectriclayer and between the opposite sidewalls.
 17. The method of claim 16wherein forming the isolation region further comprises: defining adielectric-filled region in the semiconductor body or an impurity-dopedbridge in the semiconductor body that is doped with a second impurity ofopposite conductivity type to the first impurity.